Gas Mesfet – Applications in Digital Logic and Comparative Analysis of Their Parameters


Dr. Sushanta Kumar Kamilla
Siksha ‘O’ Anusandhan (Deemed to be University), Odisha, India.


The present paper relates to Gas i.e. Gallium Arsenide MESFET (Metal Semiconductor Field Effect Transistor) centered digital logic employing LTSPICEIV (Linear Technology simulation Program with Integrated circuit emphasis) software. A NAND gate digital logic circuit with physical input constraints is designed with the help of LTSPICEIV software and analysation of its output is being analyzed by the same technology. The devices based on MESFET shows enhanced immunity to noise and its function is better than other devices like transistor. The observation on IDS is going to be performed (Drain to Source current) with respective (Drain to source Voltage) different Vgs (Gate to Source Voltage). By changing the value of Vgs its effect is detected with the help of MS-Excel graphically. Positive output results are gained by simulating NAND digital logic based Gas MESFET circuit. By analyzing the comparison of Ids with respect to Vds it’s noted that the value of Ids is at peak at zero Vgs voltage and its value reduces with more –ve gate voltage.